An Ultra-Low Power InAs/AlSb HEMT X-Band Low-Noise Amplifier
and RF Switch

 

Jonathan B. Hacker¹, Joshua Bergman¹, Gabor Nagy¹, Gerard Sullivan¹, C. Kadow², H.-K. Lin², A. C. Gossard², Mark Rodwell², and B. Brar¹

¹Rockwell Scientific Company, 1049 Camino Dos Rios, Thousand Oaks, CA 91360, U.S.A. (e-mail: jbhacker@ieee.org), ²Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.

 

Keywords—low noise amplifier, antimonide-based compound semiconductor (ABCS) HEMT, InAs/AlSb HEMT.

Abstract—Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm2 two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain of 22.3 dB. The measured dc power dissipation of the ABCS LNA was an ultra-low 1.6mW per stage, or 3.2 mW total which is less than one-tenth the dc power dissipation of a typical equivalent InGaAs/AlGaAs/GaAs HEMT LNA. Operation with degraded gain and noise figure at 0.98 mW total dc power dissipation is also verified. The compact 0.9 mm2 single-pole double-throw X-band RF switch demonstrated a 0.99 dB on-state insertion loss and an off -state isolation of  > 32 dB. These results demonstrate the outstanding potential of the ABCS HEMT technology for low-power X-band applications.

 

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