MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates
Chak-wah TANG, Jiang LI, Kei May LAU, and Kevin J. CHEN
Electrical and Electronics Engineering Department,
Keywords: Metamorphic, MOCVD, MHEMT, GaAs substrate, InAlAs/InGaAs, LT buffer
We report MOCVD-grown metamorphic InAlAs/InGaAs HEMTs with good device performance, by introducing a multi-stage buffer growth scheme. Room temperature Hall mobility of the 2-DEG was over 8000 cm2/V-s with sheet carrier densities larger than 3 x 1012 cm-2. Transistors with 0.7μm gate length exhibited transconductance up to 427mS/mm and current gain cut off frequency (fT) of 48GHz.