MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates

 

Chak-wah  TANG, Jiang LI, Kei May LAU, and Kevin J. CHEN

 

Electrical and Electronics Engineering Department, Hong Kong University of Science and Technology,

Clear Water Bay, Hong Kong SAR, Email: eewilson@ust.hk; Phone: (+852)-2358-8372

 

      Keywords: Metamorphic, MOCVD, MHEMT, GaAs substrate, InAlAs/InGaAs, LT buffer

 


Abstract

We report MOCVD-grown metamorphic InAlAs/InGaAs HEMTs with good device performance, by introducing a multi-stage buffer growth scheme.  Room temperature Hall mobility of the 2-DEG was over 8000 cm2/V-s with sheet carrier densities larger than 3 x 1012 cm-2.  Transistors with 0.7μm gate length exhibited transconductance up to 427mS/mm and current gain cut off frequency (fT) of 48GHz.

 

 

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