Temperature Dependence of InGaP/InGaAs/GaAs pHEMTs

 

Man Ni1, P. Fay1, and N. Pan2

 

1 Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556

(574) 631- 5693, Email: pfay@nd.edu

2 MicroLink Devices, Inc., Niles, IL 60714

 

 


Abstract

The temperature dependence of InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistors (pHEMTs) has been characterized by current-voltage (I-V) and capacitance-voltage (C-V) methods from ‑60 C to 80 C. The threshold voltage and transconductance are found to decrease with temperature, while the source access resistance shows a modest increase with temperature. The threshold voltage and transconductance effects can be explained by the combined effects of a decreased effective Schottky barrier height due to barrier inhomogeneity and increased channel carrier concentration with increasing temperature, while the access resistance temperature dependence arises from opposing trends in carrier concentration and channel mobility.

 

Keywords: InGaP, GaInP, pHEMT, Schottky barrier, temperature dependence

 

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