Visual and Electric Ohmic Metal Degradation From Later Process Steps

Thorsten Saeger, Tertius Rivers, Dorothy Hamada,

Fabian Radulescu, Corey Jordan, and Martin J. Brophy

 

TriQuint Semiconductor, 2300 NE Brookwood Parkway, Hillsboro, OR 97124

tsaeger@tqs.com (503) 615-9365

 

 

Keywords:  Frontend Process, pHEMT, AuGeNi Ohmic Contacts, Interconnect Metal

 

 

ABSTRACT

     Ohmic metal degradation caused wafers to fail at wafer final test due to high contact resistance.  A change in the morphology of the ohmic metal near first interconnect metal was associated with the increase in contact resistance.  It was found that previously good Ohmic contacts were ruined by overheating in O2 plasma tools near the end of the fab process.  Reducing time in plasma at that step solved the problem without compromising the quality of the plasma clean.

 

16A.pdf                       Return to TOC