InP/InGaAs DHBT Large Signal Model for Nonlinearity Harmonic
 Predictions in ICs

 

Yu-Ju Chuang1, J. W. Lai1, Kurt Cimino1, and Milton Feng1, Minh Le2, Raymond Milano2,
 R.B. Elder3 and Frank Strolli3

 

1. Department of Electrical and Computer Engineering, University of Illinois, Urbana IL 61801

2. Vitesse Semiconductor Inc. Camarillo, CA 93012

3. BAE System, Merrimack, NH 03054

 Email:  chuang1@uiuc.edu

 

 

Keywords: High–speed integrated circuits,

                    heterojunction bipolar transistors.

 


Abstract

In this work an improved large-signal transistor model is developed especially for InP DHBTs based on Agilent ADS SDD model platform. This model includes the nonlinear effects of current blocking and velocity modulation. The model is verified on Vitesse VIP2 300GHz InP/InGaAs DHBTs and the simulation results of different models are compared with measured results.  In addition to the validation of single devices, integrated circuits were designed and measured. It is shown that the model presented in this paper has more accurate predictions in circuit nonlinearity than conventional VBIC results.

 

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