ENSURING HIGH YIELD AND GOOD RELIABILITY FOR

MASS-PRODUCED HIGH-PERFORMANCE HALL EFFECT SENSORS

 

V. Mosser1, A. Kerlain1, Y. Haddab1, R. Morton2, and Martin J. Brophy2

 

1 Itron France, 50 avenue Jean Jaurès, F-92120 Montrouge, vincent.mosser@itron.com, +33 146 00 6674

2 TriQuint Semiconductor, 2300 NE Brookwood Pkwy, Hillsboro, OR, 97124  USA

 

Keywords: GaAs, P-HEMT, Reliability, Hall Effect, Sensor, Magnetic Sensor

 


Abstract

     We demonstrate the manufacturability of a very simple yet very sensitive GaAs PHEMT-based Hall sensor for home power metering applications.   Initial poor Ohmic contacts were ameliorated by minimizing thermal excursions for the wafer after contacting the Ohmics.   Extensive reliability testing was concluded and shows an expected failure rate of 0.01 FIT at their maximum operating temperature of  85 °C. 

 

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