The manufacture of optical components on 4-inch InP in a GaAs production fab

C. Youtsey, E. Beam, T. Chou, J. Jimenez, A. Ketterson, A. MacInnes, A. Mahajan,

P. Saunier and D. Wohlert

TriQuint Semiconductor, 500 W. Renner Road, Richardson, TX 75080

Email: cyoutsey@tqtx.com, Phone: (972) 392-3152

 

 

Keywords: 4-inch InP, InAlGaAs DFB laser, mesa-based high-speed photodetector, avalanche photodiode, APD, electron-beam patterned gratings

 

 

Abstract

     Optical components including multi-wavelength 1310-nm InAlGaAs DFB lasers and high-speed mesa-based PIN and APD photodetectors have been fabricated on 4-inch InP using standard production tools in a GaAs manufacturing facility. There have been few published reports on optical components fabricated on InP substrates of this size. The use of production GaAs toolsets and processes for optical component fabrication are shown to have important device cost, yield and performance advantages.

 

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