Wide-Bandgap Semiconductor Devices for Automobile Applications

 

H. Ueda (1), M. Sugimoto (2), T. Uesugi (1), and T. Kachi (1)

 

(1) TOYOTA CENTRAL R&D LABS., INC.

Yokomichi, Nagakute, Aichi-gun, Aichi, 480-1192, JAPAN

TEL  Int+81-561-63-4724                       FAX  Int+81-561-63-6042

E-mail : h-ueda@mosk.tytlabs.co.jp

(2) TOYOTA MOTOR CORP.

Kirigahora, Nishihirose, Toyota, Aichi, 470-0309, JAPAN

 

 

Keywords: GaN, HEMT, HV, inverter, insulated gate, vertical operation device

 


Abstract

     In this paper, we discuss requirements of power devices for automobile applications, especially hybrid vehicles, and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. Observation by a thermograph image of the device under high current operation showed the AlGaN/GaN HEMT operated at more than 300ēC. All the results of our GaN are really promising to realize high performance and small size inverters for future automobiles.

 

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