Development of AlGaN/GaN High Power and High Frequency HFETs under NEDO's Japanese National Project
2Research Organization of Science and Engineering,
5Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2,
1-1-1, Umezono, Tsukuba, Ibaraki
E-mail: firstname.lastname@example.org, TEL: +81-77-561-2679
NEDO’s Japanese national project on high power and high frequency nitride device is overviewed. Studies on correlation between crystal defects and device performances, electric field and thermal distribution in the device under operating conditions are demonstrated. Excellent CW RF output power of 230 W from a single chip and 371 W peak saturation power from an amplifier composed of paralleled HFET die are achieved at 2 GHz from Recessed FP gate structure. With a development of dual FP gate HFET, a state-of-the-art combination of 160 W output power and a 17.5 linear gain are realized at 2 GHz. At 30 GHz, 5.8 W CW operation are observed from T-gate HFET.