SiN Capacitors and ESD

 

Gergana I. Drandova, John M. Beall, Kenneth D. Decker

 

TriQuint Semiconductor, 500 W Renner Road, Richardson, TX 75080, Email: gdrandova@tqtx.com, Phone: (972) 994-5766

 

 

Keywords: Silicon nitride capacitors, ESD, transient simulations, Frenkel-Poole.

 


Abstract

We present Human Body Model (HBM) electrostatic discharge (ESD) test results for the three types of capacitors used in the TriQuint Texas high density interconnect process. We show a linear dependence of ESD failure voltage with respect to capacitor area (capacitance). We also show doubling of the HBM failure voltage when using two capacitors in series compared to a single capacitor of the same type with the same total capacitance. Surprisingly high HBM failure voltages were observed for large 500  SiN capacitors. Transient simulations were performed to relate the observed HBM failure voltages to the intrinsic dielectric breakdown voltages of the three types of capacitors. By incorporating a dielectric current leakage due to Frenkel-Poole emission from traps into the simulations, we were able to obtain an excellent agreement with the HBM test results.

 

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