Student Paper

 
Comparison of Different GaN Etching Techniques

 

Lei Ma1, K. Fareen Adeni1, Chang Zeng1, Yawei Jin1, Krishnanshu Dandu1, Yoganand Saripalli2, Mark Johnson2, Doug Barlage1

 

1 Department of Electrical Engineering, North Carolina State University, Raleigh, NC 27695, USA

Phone: 919-513-0442, Email:  lma@ncsu.edu

2 Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA

 

 

Keywords: GaN, Nitride, Binary Etching, Profilometer, AFM

 

 

Abstract

     Several Gallium Nitride etching techniques are reviewed and compared. The GaN binary etching technique is selected and used for this experiment, the GaN profile after etching is measured with Dektak profilometer and AFM. Three types of GaN films such as intrinsic GaN, n-type GaN and p-type GaN have been used in the binary etching technique. The experiment results show that binary etching can be utilized for GaN wet etching with good control and precision at room temperature, and at higher temperatures, too.

 

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