Bias Annealing Behavior of Plasma-Induced Defects in n-GaN Exposed to Plasma

 

S. Nakamura, M. Suda, M. Suhara, and T. Okumura

 

Division of Electrical and Electronic Engineering, School of Science and Engineering, Tokyo Metropolitan University

1-1 Minami Ohsawa, Hachioji, Tokyo, 192-0397 Japan

E-mail: nakamura@eei.metro-u.ac.jp

 

 

Keywords: reverse bias annealing, plasma-induced defects, reactivation, deactivation, gallium nitride

 

Abstract

     The behavior of plasma-induced defects deactivating Si donors in GaN has been studied by using Schottky diodes with and without an applied bias voltage.  We found the Si donors are deactivated down to 100-200 nm from the surface upon plasma irradiation at room temperature for 30-60 min. It is interesting that annealing of deactivated GaN with a reverse bias applied to a Schottky diodes leads to an enhancement of "reactivation" of the donor at temperatures much lower than 200 oC. It is speculated that the plasma-induced defects are responsible for the deactivator of the doped Si donors in GaN.

 

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