Compound Semiconductor MOSFET Structure With High- κ Dielectric

 

Karthik Rajagopalan, Ravi Drooopad, John Abrokwah, Matthias Passlack

 

Freescale Semiconductor, Inc.,  2100, E Elliott Road, Tempe, AZ-85284.

karthik.rajagopalan@freescale.com  480-413-7032

 

 

Keywords: III-V MOSFET, high mobility MOSFET, GaAs MOSFET

Abstract

     MOS heterostructures grown by molecular beam epitaxy on III-V substrates, employing a high-κ dielectric (κ ≈ 20) have been fabricated. Mobilities exceeding 12,000 cm2/Vs and 6,000 cm2/Vs, for sheet carrier concentration ns ≈ 2.5x1012 cm-2 were measured from MOSFET structures grown on InP and GaAs substrates respectively. These structures were designed for enhancement mode operation and include a 10nm thick strained InxGa1-xAs channel layer with In mole fraction x of 0.3 and 0.75 on GaAs and InP substrates, respectively.

 

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