Significant Step in Wafer Yield Optimization and Operation Cost Reduction Due to Dicing Innovation

 

M. C. Müller, R. Hendriks, H. P. Chall

 

Advanced Laser Separation International, Platinawerf 20G, 6641 TL Beuningen, The Netherlands,
mark.mueller@alsi-international.com, phone: +31 24 678 2876

 

 

Keywords: Laser dicing, multiple beam dicing, die strength

 


Abstract

Driven by packaging as well as electrical performance requirements there is a clear trend to thinner wafers and smaller die sizes. Moreover, as a result of continuing price erosion the need for a reduction of manufacturing costs is obvious.

Both can be achieved by making use of A.L.S.I.’s multiple beam laser dicing technology which is applied successfully in the high volume T&D market segment for already more than 15 years. This technology also gains importance for numerous LED applications.

Since the laser tool separates the material without directly introducing mechanical forces even thin wafers can be diced without the typical known issues. Focus sizes below 10 mm as well as the superb dynamic accuracy of A.L.S.I.’s planar motion system make it possible to decrease the dicing street to less than 30 mm thus leading to a noticeable increase of semiconductor components on a wafer.

Additional to this productivity boost the technology overcomes the process capability problems of current mechanical dicing technologies: laser dicing causes no chipping, wafers with thick backside metal-layers can be diced, also there is no quality deterioration due to wear of the sawing blade or diamond tip. Further even brittle III/V materials used for LED and RF-IC applications can be diced at high speed.

 

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