L. Gunter, W. Zhu, J. Hulse, J. Diaz, P. Seekell, W. Kong, K. Nichols, P.C. Chao BAE Systems, Nashua, NH (USA): Email: email@example.com, Ph: 603.885.6756
Keywords: PHEMT, HEMT, Breakdown Failure, Reliabilty
Breakdown failures seen as early as post gate formation are a potential yield issue for all HEMT processes. We report on several of these mechanisms and detail the experiments used to verify our hypotheses. Our findings indicated that premature breakdown failures can be correlated with both physical and chemical characteristics of the HEMT structure. Utilizing enhanced processing techniques, we have shown an increase in yield during RF screening of >50%.