Reliability Study of AlGaN/GaN HEMTs Device

K. Matsushita, S. Teramoto, H. Sakurai, Y. Takada1), J. Shim, H. Kawasaki, K. Tsuda1) and K. Takagi

Microwave Solid-state Department Toshiba Corp. 1) Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp. 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 212-8581, Japan Phone +81-44-549-5282, Fax +81-44-548-5955, e-mail: keiichi.matsushita@toshiba.co.jp

Keywords: … GaN, AlGaN, HEMT, reliability

Abstract

AlGaN/GaN HEMTs devices are studied intensely because of its ability of operation at higher voltage with higher power density. As the study progress, it is realized that the reliability of the fabricated device is a quite important issue. From the reliability study of AlGaN/GaN HEMTs, it is found that the current degradation has relationships with the isolation structure. In this paper, the differences of current degradations between two isolation methods are studied and some interpretations concerning the source of these degradations are discussed.

 

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