Leakage Current Screening for AlGaN/GaN HEMT Mass-Procuction

F. Yamaki, K. Ishii, M.Nishi, H. Haematsu, Y. tateno and H. Kawata

Eduyna Devices Inc.1000 Kamisukiawara, Shown-cho, Nakakoma-gun, Yamanashi, 409-3883,JAPAN
E-mail: f.yamaki@eudyna.com, Phone: +81-55-275-4411

Keywords: GaN HEMT, defect, SiC, leakage current, mass-Production

ABSTRACT

There are defect on GaN HEMT eitaxial wafers due to defect on the SiC substrates.  These defects cause large leakage current and degradation of RF performance of the devices on them.  Therefore, it is very important to screen the chips on defects on the wafer in AlGaN/GaN HEMT mass-production.  Through the various on-wafer DC parameters measurement, we confirmed the distribution of drain leakage current at pinch off region and their correlation with the defects on the wafers.  The difference of the drain leakage current is sufficient enough to screen the defect ships at on-wafer DC probing test.  With the screening procedure, we can maintain reliable and stable mass production of AlGaN/GaN HEMTs.

 

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