Vertical-HVPE as a Production Method for Free-Standing GaN-Substrates

B. Schineller, J. Kaeppeler, M. Heuken

AIXTRON AG, Kackertstrasse 15-17, D-52072 Aachen, Phone: +49-241-8909-193, fax: +49-241-8909-40, e-mail: b.schineller@aixtron.com

Keywords: GaN substrates, HVPE, boule growh

Abstract
The cost effective growth of free standing GaN substrates requires the boule growth approach. We developed a Vertical Hydride Vapor Phase Epitaxy (VHVPE) tool for the growth of up to 7 cm long GaN boules of 2 inch size. Prototypes were built and optimized with respect to total growth rate, parasitic ammonium chloride deposition and growth uniformity of the boule.

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