GaN-HEMT Epilayers on Diamond Substrates: Recent Progress

D. Francis¹, J. Wasserbauer¹, F. Faili¹, D. Babić¹, F. Ejeckam¹, W. Hong², P. Specht², E. Weber² ¹Group4 Labs, LLC, 1600 Adams Dr., Menlo Park, CA 95025; daniel_francis@group4labs.com, (650) 688 5760 ²Department of Materials Science and Engineering, University of California, Berkeley, CA 94720

Keywords: Gallium nitride, diamond, high-electron mobility transistors, X-Band, power, thermal management

Abstract Gallium-nitride high-electron-mobility transistors fabricated on diamond substrates are highly desired for use in high-power amplifiers for X-Band radar systems and commercial cellular-base stations. Diamond substrates have high thermal conductivity which enables highly efficient removal of heat from the active device regions. This paper describes our progress towards manufacturability of commercial-grade galliumnitride-transistor epilayers on diamond substrates. We report on the fabrication of the thickest (100 μm) and largest (4”) GaN-on-Diamond composite wafers to date and show selected material characterization results.

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