Development of Backside Process for Alternative Die Attach on HBT

Jason Fender*, Terry Daly*, Darrell Hill**, Lakshmi Ramanathan**, Philip Bowles**, Neil Tracht**

Freescale Semiconductor, Inc. Tempe Fab*, WPSL**, 2100 E. Elliot Road, Tempe, AZ, 85284 jason.fender@freescale.com; terry.daly@freescale.com; darrell.hill@freescale.com; lakshmi.n.ramanathan@freescale.com; r50296@freescale.com; n.tracht@freescale.com

Keywords: Backside, Metallization, Solder, Die Attach

Abstract

To meet the need for a wire bond-free solution for power amplifier HBT die, a backside process has been developed. Solderable contacts are formed on the backside of the die under the constraints of working with a thinned, mounted GaAs wafer. Backside process steps are described in this paper and preliminary assembly results are provided.

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