pHEMT Gate Formation Using a Dielectrically Defined Gate with No Plasma Damage

M. Wayne Pickens, John W. L. Dilley, Brook D. Raymond

Tyco Electronics, Commercial Product Solutions, Roanoke, VA pickensw@tycoelectronics.com 540 563-3983, dilleyj@tycoelectronics.com 540 563-8607, raymondb@tycoelectronics.com 540 563-8675

Keywords: pHEMT; Double Recess; Gate Formation; Field Plates; Plasma Damage; Dry Etch

Abstract

A pHEMT gate formation process using a dielectrically defined gate window with no plasma damage to the gate layer has been developed. The process is compatible with field plates of arbitrarily large dimensions and is extendable to a reduced gate length through the use of a dielectric spacer process.

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