HighPerformance BiHEMT HBT / ED pHEMT Integration

T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit
TriQuint Semiconductor 2300 NE Brookwood Parkway Hillsboro, OR 97124 (503)6159301
 thenderson@tqs.com

Abstract

We report on the status of TriQuint’s BiHEMT process the cointegration of TriQuint’s InGaP/GaAs HBT power amplifier technology with an InGaAs/AlGaAs E/DMode pHEMT technology into a single GaAs process. This added pHEMT functionality over previously reported GaAs HBT/FET cointegration technologies adds an additional level of versatility and potential circuit applications. Potential applications include the cointegration of HBT power amplifier circuitry with pHEMTbased bias control and logic circuitry, RF switches, and low noise amplifiers. The growth and process technologies developed for this process, as well as the preliminary device characteristics and process features, will be described. Finally, we will describe the process and performance tradeoffs featured in the BiHEMT process.

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