Monolithic Integration of E/Dmode pHEMT and InGaP HBT Technology on 150mm GaAs Wafers

C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang,
M. C. Tu and Y. C. Wang

WIN Semiconductors Corporation
No. 69, Technology 7th Rd., Hwaya Technology Park, Kuei Shan Hsiang,
Tao Yuan Shien, Taiwan 333
Phone: +88633975999 ext. 1555, email: cklin@winfoundry.com

KEYWORDS: GAAS, WAFERLEVEL INTEGRATION, HBT, PHEMT, ENHANCEMENTMODE PHEMT

Abstract

Waferlevel integration of GaAs enhancementmode pHEMT, depletionmode pHEMT and HBT (H2W is the code name at WIN) is a very appealing technology, which offers a number of significant advantages over conventional device technologies. In this paper, we report the development status of the H2W at WIN Semiconductors. MOCVDgrown epitaxial material is selected with InGaP HBT on top of pHEMT device to minimize the potential drawback of excessive parasitic compared to the pHEMT atop of HBT structure. Critical process steps, such as gate photolithography and gate recess process control, will be discussed and presented. The EDpHEMT and HBT electrical performance (DC, small signal, noise, and power) and uniformity data will be included in the paper as well. Functional building blocks, such as high power switches and power amplifiers, based on the H2W technology will also be demonstrated

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