Development and Ramping of pHEMT in an “HBT Fab”

Mike Fresina, C. Barratt, C. Duncan, S. Greene, W. Lewis, L. Li, T. Rogers, C. Santana, W. Wohlmuth, and R. Yanka
RFMD, 7628 Thorndike Road, Greensboro, NC 27403,
www.rfmd.com, mfresina@rfmd.com

KEY WORDS: HBT, pHEMT, integration, manufacturing

INTRODUCTION

In the last 10 years RFMD has gone from a fabless RF integrated circuit company to having the largest GaAs wafer manufacturing capacity in the industry. This success has been aided by the singular focus of producing only HBT wafers for cellular power amplifiers. However, to support increasing integration requirements, specifically those of front-end and TX modules, we have recently added a pHEMT process for switches. In this paper we will discuss the challenges, opportunities and lessons learned in developing and ramping a pHEMT process in what had been up to that point an HBT fab.

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