Plasma Surface Pretreatment Effects on Silicon Nitride Passivation of AlGaN/GaN HEMTs

David J. Meyer1*, Joseph R. Flemish1, and Joan M. Redwing1

1 Department of Materials Science and Engineering,
The Pennsylvania State University, University Park, PA 16802
* Email: djm308@psu.edu , Tel: 814-865-0889

Keywords: AlGaN, HEMT, transistor, passivation, pulsed IV

Abstract

Several plasma and wet-chemical surface treatments have been tested to determine their effectiveness in improving SiN passivation of the AlGaN surface in HEMT devices. Mitigation of RF dispersion was evidenced by dramatic improvements in pulsed IV data after various plasma surface treatments and SiN passivation were applied to gate-level processed HEMTs. To examine surface chemistry as a result of these treatments, XPS was used to obtain atomic concentrations and bonding information.

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