Gallium Nitride Surface Treatment Study for FET Passivation Process Flow Applications

M.T. Veety*, V.D. Wheeler**, M.P. Morgensen*, M.A.L. Johnson**, D.W. Barlage*
*Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA, mtveety@ncsu.edu
** Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, UA
Keywords: Processing, Etch & Etch Stops, Wide Bandgap, Passivation Techniques

Abstract
Wet chemical etches were investigated for surface passivation applications of Gallium Nitride grown on cplane sapphire substrates. Samples were treated and
then analyzed utilizing XPS. MISFET structures were fabricated on two Gallium Nitride samples in a split experiment with and without acid treatment prior to gate dielectric deposition. Devices with acid treatment showed decreased gate leakage, increased Ion/Ioff ratio, decreased subthreshold swing, increased pinch off voltage and increased transconductance over those without.
 
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