Evaluation of Test Methods Employed for Characterizing Semi-Insulating Nature of Monocrystaline SiC Semiconductor Materials

M.F. MacMillan1, W. Mitchel2, J. Blevins2, G. Landis2 , J. Daniel2 , R. S. Sandhu3, G.
Chung1, M. Spaulding1 T. F. Zoes1, E. Emorhokpor4, C. Basceri5, J. Jenny5, E. Berkman5,
Wolfgang Jantz6, W. Eichhorn7, A. Blew8, and J.D. Oliver9 Mark Fanton10, Tim Bogart10 and Bill Eversson10


1 Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686
2 Air Force Research Laboratory, AFRL/RXPS, Wright Patterson AFB, OH 45433-7707
3 Northrop Grumman Corporation – S.T. 1 Space Park, Redondo Beach, CA 90278, USA
4 II-VI, Inc., 20 Chapin Road, Suite 1005, PO Box 840, Pine Brook, NJ 07058, USA
5 Cree, Inc., 4600 Silicon Dr., Durham, NC 27703
6 SemiMap Scientific Instruments GmbH, Tullastr. 67, D79108 Freiburg, Germany
7 Eichhorn and Hausman, GMBH, Benzstrasse 7-9, 76185 Karlsruhe, Germany
8 Lehighton Electronics, 208 Memorial Drive, P.O. Box 328 Lehighton, Pa. 18235, USA
9 Northrop Grumman Corporation – E. S., P.O. Box 1521 Baltimore MD 2120, USA
10 Penn State Electro-Optics Center 222 North Pointe Blvd Freeport, PA 16229

Keywords: Resistivity, 4H-SiC, 6H-SiC, SEMI, Round-Robin

Abstract: Silicon carbide (SiC) substrates offer an attractive template for the development of gallium nitride-based semiconductor materials device technologies for the advancement of high power solid-state microwave and millimeter wave circuits in the commercial and military defense markets. To ensure that the resistivity specifications of semi insulating (SI) are accurately determined and reported, the SEMI North American SiC Task Force has completed a first round robin test activity which includes evaluating contact and non-contact test methods employed to report high resistivity values for SiC semiconductor materials. Results from the round robin are aligned with customer requirements for the development of a semiinsulating specification and test method for SiC substrates.
 
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