Evaluation of Test
Methods Employed for Characterizing Semi-Insulating Nature of
Monocrystaline SiC Semiconductor Materials
|Keywords: Resistivity, 4H-SiC, 6H-SiC, SEMI, Round-Robin
Abstract: Silicon carbide (SiC) substrates offer an attractive template for the development of gallium nitride-based semiconductor materials device technologies for the advancement of high power solid-state microwave and millimeter wave circuits in the commercial and military defense markets. To ensure that the resistivity specifications of semi insulating (SI) are accurately determined and reported, the SEMI North American SiC Task Force has completed a first round robin test activity which includes evaluating contact and non-contact test methods employed to report high resistivity values for SiC semiconductor materials. Results from the round robin are aligned with customer requirements for the development of a semiinsulating specification and test method for SiC substrates.
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