Pre-passivation Plasma Surface Treatment Effects on Critical Device
Electrical Parameters of AlGaN/GaN HEMTs
|Keywords: HEMT, Passivation, Pulsed I-V, Plasma
This work reports on our investigation of fundamental aspects of surface modification and passivation relating to manufacturability of reliable AlGaN/GaN HEMT devices. We have found that successful mitigation of the RF dispersion in these HEMTs is highly dependent on the type of pre-passivation surface treatment. Surface plasma treatments consisting of C2F6, O2, Cl2, or NH3 used in conjunction with PECVD SiNx allow for the best pulsed I-V characteristics. Less dependent on pre-passivation surface treatment are dc I-V parameters such as interdevice isolation current and gate leakage current, whose magnitude can be altered greatly by varying SiNx film deposition conditions.
|13.4 PDF||Return to TOC|