Pre-passivation Plasma Surface Treatment Effects on Critical Device Electrical Parameters of AlGaN/GaN HEMTs

David J. Meyer1*, Joseph R. Flemish1, and Joan M. Redwing1
1 Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
* Email: djm308@psu.edu , Tel: 814-865-0889

Keywords: HEMT, Passivation, Pulsed I-V, Plasma

Abstract
This work reports on our investigation of fundamental aspects of surface modification and passivation relating to manufacturability of reliable AlGaN/GaN HEMT devices. We have found that successful mitigation of the RF dispersion in these HEMTs is highly dependent on the type of pre-passivation surface treatment. Surface plasma treatments consisting of C2F6, O2, Cl2, or NH3 used in conjunction with PECVD SiNx allow for the best pulsed I-V characteristics. Less dependent on pre-passivation surface treatment are dc I-V parameters such as interdevice isolation current and gate leakage current, whose magnitude can be altered greatly by varying SiNx film deposition conditions.
 
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