A Novel AlGaN/GaN Field-Effect Diode with a Low Turn-on Voltage Operation using Fluoride-Based Plasma Treatment

K. Takatani, T. Nozawa, T. Oka, H. Kawamura, and K. Sakuno
Advanced Technology Research Laboratories, Sharp Corporation,
2613-1, Ichinomoto-cho, Tenri, Nara 632-8567, Japan
Phone: +81-743-65-2485, FAX: +81-743-65-2487, e-mail: takatani.kunihiro@sharp.co.jp

Keywords: AlGaN/GaN, FESBD, Fluoride-based Plasma, RIE, SOCFED

Abstract
The fabrication and I-V characteristics of the novel AlGaN/GaN field effect diode are reported. This diode has a distinguishing anode structure and the relatively thick AlGaN barrier layer in contrast a conventional field-effect Schottky barrier diode (FESBD). By using fluoride-based plasma treatment, we could reduce its turn-on voltage to 0 V and decrease its leakage current at the reverse voltages.
 
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