Development of a Symbolically Defined Large Signal InP/GaAsSb Type-II
|Keywords: Double Heterojunction Bipolar Transistor
Type-II, Mixed Signal Circuits
A large signal device model is developed for type-II InP/GaAsSb/InP devices that is based on the UIUC Type-I SDD model. The model accurately characterizes a balanced 480/420 GHz fT/fMAX device, and is used to design and simulate a 200 GHz static frequency divider.
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