He+ Plasma Cleaning of Epiready InSb(112)B Surfaces for Compound Semiconductor Heteroepitaxy

M. Jaime-Vasquez, A. J. Stoltz, R.N. Jacobs, L.A. Almeida, J.D. Benson, and M. Martinka
U.S. Army Research, Development and Engineering Command (RDECOM) Communications-Electronics Research, Development and Engineering Center (CERDEC), Night Vision and Electronic Sensors Directorate (NVESD), 10221 Burbeck Road, Fort Belvoir, Virginia 22060-5806
Email: info@nvl.army.mil

Keywords: XPS, AES, RHEED, Plasma Cleaning, InSb(112)

Abstract
Cleaning of InSb(112)B substrate to prepare this semiconductor for heteroepitaxy by molecular beam epitaxy (MBE) is presented. The InSb(112)B surface has been prepared by 2-step process consisting of a wet etched step followed by a brief low energy exposure of He+ plasma with an Inductevely Couple Plasma (ICP) system. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and reflection high energy electron diffraction (RHEED) analysis show that this 2-step process lead to a uniformed “epi-ready” InSb(112) surface that is nearly stoichiometric, and free of oxides and residual contamination.
 
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