Monolithic Integration of an Electroabsorption Modulator into a GaAs-based Duocavity
VCSEL for Resonance-free Modulation

J. van Eisden
1, M. Yakimov1, V. Tokranov1, E. M. Mohammed2, I. A. Young2
and S. R. Oktyabrsky
1
1College of Nanoscale Science and Engineering, SUNY Albany, Albany, NY
Tel.:(518)-437-8609, email:myakimov@uamail.albany.edu
2Intel Corporation, Hillsboro OR

Keywords: Vertical cavity Surface Emitting Laser (VCSEL), High-frequency modulation, Semiconductor lasers, Fabri-Perot Cavities

Abstract
A novel device concept of Vertical Cavity Surface Emitting Laser (VCSEL) with integrated modulator is demonstrated. Gain and absorption media are positioned in two Fabri-Perot cavities formed by three DBR stacks. Tuning relative spectral positions of two cavities resonances allows operation without optoelectronic feedback, extending modulation response well beyond optoelectronic resonance frequency.
 
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