High Yield, Highly Scalable, High Voltage GaInP/GaAs HBT Technology

P. Kurpas, B. Janke, A. Wentzel, H. Weiss*, L. Schmidt*, C. Rheinfelder*, R. Pazirandeh,
A. Maaßdorf, L. Schellhase, W. Heinrich, J. Würfl

Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff -Str. 4, 12489 Berlin, Germany
Phone: +49-30-6392-2674, fax: +49-30-6392-2685, e-mail: paul.kurpas@fbh-berlin.de
* Ubidyne GmbH, Lise-Meitner-Strasse 14, 89081 Ulm, Germany
Phone: +49-731-880071-39, Fax: +49-731-880071-99, e-mail: lothar.schmidt@ubidyne.com
Keywords: GaInP/GaAs HBT, power HBT, mixed signal digital circuits, yield

Abstract
Based on a power high-voltage (HV) HBT technology the successful down scaling towards low-power devices for mixed signal integrated circuits is described. Stress effects and mechanical stability issues required processing adaptations. High yields of 99.8 % for 3x30 μm2 and 99.0% for 2x10 μm2 HV-HBTs were achieved. This allows for fabrication of complex integrated circuits with several hundreds of transistors monolithicallycombining power and digital circuit parts.
 
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