High Efficiency Base Station Amplifier Architectures Utilizing LDMOS and GaN High Power Transistors

Bill Vassilakis, Joseph Storniolo, Jeremy Monroe

Powerwave Technologies, Inc., 1801 East St. Andrew Place, Santa Ana, CA Tel: 1-714 466-1240 Email: bvassilakis@pwav.com

 

Keywords: LDMOS, GaN, Doherty, Linearization, Pre-distortion

 

ABSTRACT

High efficiency amplifier architectures are critical in modern communication systems. Third generation cellular systems and the upcoming LTE (Long Term Evolution) networks will continue to demand increasing transmitter efficiency and lower cost. In addition, linearity demands will be more stringent in order to meet the required spectral efficiencies, and the high bit throughput required by network users.

 

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