Sefa Demirtas1, Jesus A. del Alamo1, Donald A. Gajewski2, Allen Hanson2
1Massachusetts Institute of Technology, 77 Massachusetts Ave. Cambridge, MA 02139 2Nitronex Corporation, 2305 Presidential Dr. Durham, NC 27703 firstname.lastname@example.org Phone (617) 253-1620
Keywords: GaN MMIC, silicon nitride, MIM capacitor, ramped voltage stress, lifetime estimation
We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 0C operation and manufactured in a GaN process flow. It is shown that very small area capacitors (10um x 10um) with a dielectric thickness of 400nm exhibit lifetimes as long as 1.48E10 hours under such conditions.