PECVD Silicon Nitride Film Property and Pre-deposition Surface Treatment Effects on MIMCAP Reliability for InGaP/GaAs HBT Applications

Tong Wang

141 Mount Bethel Road, Warren, NJ 07059,, 908-668-5000 x5472

Keywords: MIMCAP, PECVD, reliability, PCT, silicon nitride, deposition


We report on the development of two silicon nitride films deposited at 300°C using PECVD processes for applications in high density metal-insulator-metal capacitor dielectrics in InGaP/GaAs devices. The two films are compared to an existing silicon nitride film previously developed on a different deposition tool under different process conditions.

43.PDF                      Return to TOC