Corey Nevers, Andrew T. Ping, Tertius Rivers, Sumir Varma, Fred Pool, Moreen Minkoff, Ed Etzkorn, Otto Berger
TriQuint Semiconductor 2300 NE Brookwood Parkway, Hillsboro, OR. 97124 Corey.Nevers@tqs.com, (503) 615-9284
Keywords: 0.25mm, E/D pHEMT, AlGaAs/InGaAs, 150mm, sidewall spacer
TriQuint has developed a 150 mm high-volume 0.25 mm enhancement / depletion (E/D)-mode pseudomorphic high-electron mobility (pHEMT) AlGaAs / InGaAs based transistor process. Released as TQP25, the 0.25 mm gate length target is possible by utilizing a sidewall spacer process and is a hybrid of TQPED (0.5 mm) and the TQP13 (0.13 mm) pHEMT processes from TriQuint. Typical Depletion-FET (DFET) parameters
include a 50 GHz unity current gain cut-off frequency (Ft), -900 mV pinchoff voltage, 550 mA/mm Imax (Vgs = 0.9V), 1.0 mmm on resistance, and a 12 V minimum breakdown voltage. Additionally, the TQP25 process presented here includes a 0.35 mm Enhancement-FET (EFET) not typical at this technology node. Nominal EFET parameters are a 45 GHz Ft, a 300 mV threshold voltage, 1.3 m-mm on-resistance, and a 12 V minimum breakdown voltage. Passive components include two thin film resistor options (50 m/square and 1Km/square), a 0.62 fF/mm2 MIM capacitor and 1 local layer of evaporated interconnect and 1 global planarized plated metal layer. TQP25 allows designers to create circuits ranging in diverse applications from the cellular band to Ku-band.