F.S. Pool, Andrew T. Ping, and Michele Wilson
TriQuint Semiconductor 2300 NE Brookwood Parkway Hillsboro, Oregon 97124 (503) 615-9454, Fred.Pool@tqs.com
Keywords: pHEMT, ohmic metal, helicon mode, oxide
PHEMT device parametric performance was improved by transfer from a transformer coupled plasma source to an RF helicon wave high density plasma source for the oxide dielectric etch prior to ohmic metal deposition. Process stability and uniformity were enhanced leading a higher yielding product with a wider process window. Significant improvement was measured for device parameters such as contact resistance, on resistance, and transconductance. Evaluation of etch source differences were investigated by examining surface damage.