Influence of Dielectric Plasma Etch Source for PHEMT Device Performance

F.S. Pool, Andrew T. Ping, and Michele Wilson

TriQuint Semiconductor 2300 NE Brookwood Parkway Hillsboro, Oregon 97124 (503) 615-9454, Fred.Pool@tqs.com

Keywords: pHEMT, ohmic metal, helicon mode, oxide

ABSTRACT 

PHEMT device parametric performance was improved by transfer from a transformer coupled plasma source to an RF helicon wave high density plasma source for the oxide dielectric etch prior to ohmic metal deposition. Process stability and uniformity were enhanced leading a higher yielding product with a wider process window. Significant improvement was measured for device parameters such as contact resistance, on resistance, and transconductance. Evaluation of etch source differences were investigated by examining surface damage.

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