Li-Han Hsu1, 2, Wei-Cheng Wu1, 2, Edward Yi Chang1, Herbert Zirath2, Yun-Chi Wu1, and Chin-Te Wang1 and Szu-Ping Tsai1
This paper presents the fabrication process of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging MS (microstrip) RF-MEMS devices. The interconnect structure with MS-to-CPW transition between GaAs MEMS substrate and Al2O3 motherboard was in-house fabricated. A novel fabrication process for RF-MEMS packaging is in detail. After fabrication, the samples were measured up to 110 GHz using on-wafer probing measurement. From the measured results, the insertion loss of entire interconnect structure is better than -2 dB up to 100 GHz, documenting the feasibility for millimeter-wave RFMEMS devices packaging applications.