Determination of Junction Temperature of GaN-based Light Emitting Diodes by Electroluminescence and Micro-Raman Spectroscopy

Yaqi Wang1, Hui Xu1, Siddharth Alur1, An-Jen Cheng1, Minseo Park1*, Sharukh Sakhawat2, Arindra N. Guha2, Okechukwu Akpa2, Saritha Akavaram2 and Kalyankumar Das2

1Department of Physics, Auburn University, Auburn, AL 36849 2Electrical Engineering Department, Tuskegee University, Tuskegee, AL 36088 *corresponding author Phone: 334-844-4627 Email: wangyaq@auburn.edu

Keywords: GaN, LED, Electroluminescence, Raman spectroscopy
ABSTRACT

Rise of junction temperature during operation can greatly affect performance and reliability of Light-emitting diodes (LED). Unfortunately, the junction temperature of the LED can not be measured directly. In this report, non-contact methods using Electroluminescence (EL) and Micro-Raman spectroscopy were employed to estimate the junction temperature of GaNbased LED.

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