PVD of AlN Nucleation Layers for GaN-based LED Structures: A Cheaper and Brighter Alternative

D. Hanser, E.A. Preble, T. Clites, T. Stephenson, R. Jacobs, T. Johnson, T. Paskova, and K.R. Evans

Kyma Technologies, Inc. 8829 Midway West Road, Raleigh, NC 27617 1+ (919) 789-8880 hanser@kymatech.com

Keywords: AlN, PVD, GaN, LED, MOCVD


A physical vapor deposition (PVD) process for AlN nucleation layers has been developed to improve the manufacturing and performance of GaN-based light emitting diodes. AlN nucleation layers were prepared and their properties were analyzed via X-ray diffraction, AFM, and with a thin film analyzer. The AlN layers exhibited a highly oriented crystalline structure with smooth surfaces and good thickness uniformity. LEDs grown via MOCVD on sapphire using the AlN nucleation layers were shown to simplify the MOCVD growth process and improved the performance of LEDs when compared to devices grown on sapphire using a conventional growth approach.


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