0.15 Micron Gate 6-inch pHEMT Technology by Using I-Line Stepper

Cheng-Guan Yuan, S.M. Joseph Liu, Der-Wei Tu, Rex Wu, Jeff Huang, Frank Chen and Yu-Chi Wang

WIN Semiconductors Corp. No. 69 Technology 7th Rd, Hwaya Technology Park, Kuei Shan Hsiang, Tao Yuan Shien, Taiwan (333). Website: www.winfoundry.com

ABSTRACT

A production ready 0.15μm-optical-gate pseudomorphic high electron mobility transistor (pHEMT) using i-line stepper has been developed. Yield exceeding 99% is demonstrated for devices with 0.9mm gate width across a 6-inch GaAs wafer. These results indicate that the 0.15μm optical gate pHEMT technology is ready for high volume production with low cost at WIN Semiconductors.

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