150 nm InP HBT Process with Two-Level Airbridge Interconnects and MIM Capacitors for Sub-Millimeter Wave Research
William Snodgrass, Mark Stuenkel, and Milton Feng
University of Illinois at Urbana-Champaign, Urbana, IL 61801
Phone: (217)244-3662. Email: firstname.lastname@example.org
Keywords: Indium Phosphide, Heterojunction Bipolar Transistor, MMIC.
A 150 nm emitter width HBT fabrication process for device-level research is described. Simple passive elements are integrated after device planarization for future demonstration of sub-millimeter wave MMICs.