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Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

 

Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1,

Lawrence E. Larson3 and Leo C. N. de Vreede1

1Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology,

Mekelweg 4, 2628 CD, Delft, the Netherlands, c.huang@tudelft.nl, 0031(0)152787964

2Skyworks Solutions, Inc., 2427 W. Hillcrest Drive 889-A1, Newbury Park, CA 91320

3Center for Wireless Communications, Department of Electrical and Computer Engineering,

University of California at San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0407

 

Keywords: Compound semiconductor, low distortion, Q factor, tunable circuits and devices, varactors.

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Abstract

An overview is given for the current state-of-the-art of semiconductor based tunable RF elements. For this purpose, semiconductor based capacitive switch banks and varactors are reviewed and compared with the recently developed ultra-low distortion semiconductor based varactors. It reveals that the latter solution, when compared against all existing technology platforms for continuously tunable elements, can provide superior performance in tuning range, linearity, and quality factor.

 

 

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