W-band Penta-Composite Channel InAlAs/InGaAs Metamorphic HEMT for High
Power Application and Comparison with Pseudomorphic HEMT
KEYWORDS: MHEMT, PHEMT, composite channel, IP3, gm
Advance device design of novel penta-composite channel of 0.25 μm InAlAs/InGaAs MHEMT has been reported for the first time in composite channel HEMT. Highest Indium mole fraction of 0.78 in channel and total channel thickness of 140 Å was found to be an optimized structure. It has both higher ID of 1029 mA/mm and flatterer gm of 648 mS/mm at VDS of 1.3 V. AC analysis results fT of 125 GHz and fmax of 250 GHz, which makes the device useful for W-band Power amplifier applications. Comparison between MHEMT and PHEMT has also been emphasized with respect to transconductance (gm) and drain current (ID).