W-band Penta-Composite Channel InAlAs/InGaAs Metamorphic HEMT for High

Power Application and Comparison with Pseudomorphic HEMT

 

Partha Mukhopadhyay1 (Member, IEEE), Sudip Kundu1(Member, IEEE), Palash Das1(Member, IEEE), Saptarshi

Pathak1(Member, IEEE), Edward Y. Chang2 (Senior Member, IEEE) and Dhrubes Biswas1 (Senior Member, IEEE)

1Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, India

2Department of Material Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan

partha@ece.iitkgp.ernet.in, Ph: +91-9434502268

 

KEYWORDS: MHEMT, PHEMT, composite channel, IP3, gm

 

Abstract

Advance device design of novel penta-composite channel of 0.25 μm InAlAs/InGaAs MHEMT has been reported for the first time in composite channel HEMT. Highest Indium mole fraction of 0.78 in channel and total channel thickness of 140 Å was found to be an optimized structure. It has both higher ID of 1029 mA/mm and flatterer gm of 648 mS/mm at VDS of 1.3 V. AC analysis results fT of 125 GHz and fmax of 250 GHz, which makes the device useful for W-band Power amplifier applications. Comparison between MHEMT and PHEMT has also been emphasized with respect to transconductance (gm) and drain current (ID).

 

 

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