A Foundry-Ready Ultra High fT InP/InGaAs DHBT Technology

 

Yuefei Yang, Dave Rasbot, Chung-Hsu Chen, Bryan Lee, Wing Yau, Daniel Hou, and Dave Wang

Global Communication Semiconductors, Inc.

23155 Kashiwa Court, Torrance, CA 90505

Email: yfyang@gcsincorp.com, Tel: 310-530-7274 Fax: 310-530-7279

 

Keywords: InP DHBTs, High fT HBTs, HBT Reliability.

 

Abstract

An ultra-high-fT InP/InGaAs DHBT technology has been developed and qualified for foundry service. The device has fT of up to 300GHz, fmax > 250GHz, and is very reliable, with MTTF >2x106 hours at Tj of 125oC. This technology is an ideal candidate for high-speed digital, millimeter-wave and mixed-signal circuits. Tradeoffs between fT and BVceo have been studied and advantages of InP DHBT over InP SHBT and SiGe HBT are reported in this paper.

 

 

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