A Foundry-Ready Ultra High fT InP/InGaAs DHBT Technology
Keywords: InP DHBTs, High fT HBTs, HBT Reliability.
An ultra-high-fT InP/InGaAs DHBT technology has been developed and qualified for foundry service. The device has fT of up to 300GHz, fmax > 250GHz, and is very reliable, with MTTF >2x106 hours at Tj of 125oC. This technology is an ideal candidate for high-speed digital, millimeter-wave and mixed-signal circuits. Tradeoffs between fT and BVceo have been studied and advantages of InP DHBT over InP SHBT and SiGe HBT are reported in this paper.