Investigation and Improvement of Early MIM Capacitor Breakdown
with a Focus on Edge Related Failures.
Keywords: GaN HEMT, MMIC, MIM, capacitor, yield, quality
When maintaining quality of a metal-insulator-metal capacitor process, it is important to fully understand the root cause for inferior breakdown of MIM PCM structures. This paper demonstrates a case of early capacitor breakdown and describes our method to identify defects before the destructive test with focus on edge-related failures. This led to understanding root cause and generating necessary experiments for improvement. A low-breakdown mode in the distribution was mostly eliminated through liftoff improvement and design rule adjustment.