Comparative high-temperature DC characterization of HEMTs

with GaN and AlGaN channel layers

 

M. Hatano1, N. Kunishio1, H. Chikaoka1, J. Yamazaki1, Z. B. Makhzani1, N. Yafune2,3,

K. Sakuno3, S. Hashimoto4, K. Akita4, Y. Yamamoto4, and M. Kuzuhara1

1 Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

2 Japan Research and Development Center for Metal,

Toyokaiji-bldg., 1-5-11 Nishishinbashi, Minato-ku, Tokyo 105-0003, Japan

3 Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

4 Sumitomo Electric Industries, Ltd., Semiconductor Technologies R & D Laboratories,

1-1-1 Koya-Kita, Itami-shi, Hyogo 664-0016, Japan

 

Keywords: AlGaN channel, high-temperature, HEMT

 

Abstract

AlGaN-channel high-electron mobility transistors (HEMTs) on an AlN substrate have been fabricated for the first time. A maximum saturation current of 0.13A/mm at VGS =2V and a maximum transconductance of 25mS/mm were obtained. DC characteristics of AlGaN-channel HEMT and GaN-channel HEMT were comparatively examined at temperatures ranging from RT to 300ºC. The temperature coefficient of drain current for the AlGaN-channel HEMT was about one half of that for GaN-channel HEMT. These results indicate that AlGaN-channel HEMTs grown on an AlN substrate are promising candidates for high-temperature electronics applications.

 

 

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