Comparative high-temperature DC characterization of HEMTs
with GaN and AlGaN channel layers
Keywords: AlGaN channel, high-temperature, HEMT
AlGaN-channel high-electron mobility transistors (HEMTs) on an AlN substrate have been fabricated for the first time. A maximum saturation current of 0.13A/mm at VGS =2V and a maximum transconductance of 25mS/mm were obtained. DC characteristics of AlGaN-channel HEMT and GaN-channel HEMT were comparatively examined at temperatures ranging from RT to 300ºC. The temperature coefficient of drain current for the AlGaN-channel HEMT was about one half of that for GaN-channel HEMT. These results indicate that AlGaN-channel HEMTs grown on an AlN substrate are promising candidates for high-temperature electronics applications.