Impact of gate metal fringe removal on small signal RF gain of AlGaN/GaN HEMTs
Keywords: AlGaN/GaN HEMTs, small signal gain, RF gain
In this paper a simple and applicable process step to improve the small signal RF gain of AlGaN/GaN-HEMTs is presented. By removing the gate metal fringes at the gate head of the devices the gain drain capacitance is reduced by an average of 30% at VDS=40V. This results in an averaged gain improvement of 1.5dB at 10GHz. The presented process step can be easily implemented in an existing process flow.