The Use of Optical Emission Interferometry for Controlled Etching of
III V materials.
Plasma Etching, Optical Emission, Interferometry,Endpoint
For plasma etching processes, Optical Emission Interferometry (OEI) combines the advantages of Optical Emission Spectroscopy (OES) and laser interferometry. Radiation emitted by the plasma is reflected from the substrate surface and monitored using a multi-wavelength spectrometer. Analysis of the OEI signal provides endpoint data, and etch rate and etch depth information for both single and multi-component materials. Examples of these applications are described.